Method of forming a metal layer on a substrate, including formation of wetting layer at a high temperature
US6156645A · kind A · utility
5Cited by
18References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 25, 1996 |
| Grant date | Dec 5, 2000 |
| Priority date | — |
| Expiry date | Oct 25, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wetting layer is formed on a substrate at a relatively high process temperature (e.g., the temperature of the substrate and/or the temperature within a process chamber in which the wetting layer is formed). A metallization layer that is subsequently formed on the wetting layer adheres to the wetting layer better than the metallization layer would adhere to the wetting layer if the wetting layer was formed at a lower process temperature. The high process temperature causes the density of the wetting layer to be increased, so that, consequently, the wetting layer has a smoother surface to which the metallization layer can adhere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.