Method and apparatus for plasma processing
US6156663A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 1996 |
| Grant date | Dec 5, 2000 |
| Priority date | — |
| Expiry date | Sep 27, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided is a method of processing a sample by generating plasma by an electromagnetic wave, wherein a material containing carbon, such as silicon carbide (Sic), is disposed in a vacuum container serving as a discharge region. The inside of an etching chamber is cleaned by O.sub.2 cleaning treatment by using a sheet type dry etching apparatus, and after an inner wall temperature of the etching chamber is set and controlled, a sample is conveyed into the etching chamber, and a TiN cap layer, an Al--Cu alloy layer and a TiN barrier layer are plasma-etched in order by using BCl.sub.3 /Cl.sub.2 /CH.sub.4 /Ar gases with the pattern of a resist film as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.