Patent · US Expired

Method of patterning a semiconductor device

US6156669A · kind A · utility

7Cited by
9References
10Claims
0Family size

Assignee

Inventor

Key dates

Filing dateDec 23, 1999
Grant dateDec 5, 2000
Priority date
Expiry dateDec 23, 2019

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S438/942
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A method for forming semiconductor devices involves nebulizing a liquid suspension of particles to form tiny droplets of particles and liquid which are well separated from one another. The nebulized droplets may correspond roughly to the average particle size which may be, for example, about one to two microns. The particles in droplet form then form a vaporous dispersion which can be dried to remove the liquid. The particles may be biased so as to repel one another to further form a well defined separation between adjacent particles. The particles may then be collected on a substrate so that a random distribution of masking particles are formed. The randomly distributed particles may be used as a mask for defining features in a semiconductor structure. The mask may be utilized, for example, to define emitters in a field emission display or spacers in a liquid crystal display.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.