Semiconductor memory device having a long data retention time with the increase in leakage current suppressed
US6157055A · kind A · utility
4Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 4, 1998 |
| Grant date | Dec 5, 2000 |
| Priority date | — |
| Expiry date | Nov 4, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/05
Abstract
In a semiconductor memory device such as a DRAM, a conductive film (1.11') is arranged on the rim portion of a isolation insulating film (1.2) in opposition to a semiconductor substrate (1.1) with a thin insulating film in between. This conductive film (1.11') is electrically connected to a lower electrode (1.11) of a storage capacitor. This novel arrangement can control the location of electrical pn junction independently of the location of metallurgical pn junction, thereby realizing a semiconductor memory device having a long data retention time with the increase in leakage current suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.