Patent · US Expired

Defect inspection apparatus for silicon wafer

US6157444A · kind A · utility

48Cited by
1References
3Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 24, 1998
Grant dateDec 5, 2000
Priority date
Expiry dateNov 24, 2018

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N21/9501
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

In order to easily evaluate defects of the silicon wafer affecting the characteristic of a device, the present invention provides a defect inspection apparatus for detecting defects existing on a surface of a sample and/or inside the sample, which comprises a display apparatus for displaying a distribution of the defects on a graph having coordinate axes of distance from a central position of the sample and the depth where the defect exists based on the depth information and the positional information obtained by a detecting means.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.