Plasma etching method and plasma etching system for carrying out the same
US6159388A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 1998 |
| Grant date | Dec 12, 2000 |
| Priority date | — |
| Expiry date | Jan 26, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Plasma etching method and apparatus for removing relatively thick portions from wafers by etching while measuring an actual etch quantity to thereby manufacture the wafers excellent in flatness quality on a mass-production basis. A conduit 20 of a plasma generator 2 is positioned above a relatively thick portion 111 of the wafer 110 to etch away a wafer material from the relatively thick portion 111 by ejecting a fluorine gas G. A laser beam L0 is emitted from a laser displacement meter 30 of a measuring apparatus 3 to detect an interference state between a reflected light beam L1 from the relatively thick portion 111 and a reflected light beam L2 form a reflecting plate 32 and count periodical changes of the interference state. When the count value m coincides with an integral value derived by dividing a desired etch quantity by a half wavelength of the laser beam L0, etching of the relatively thick portion 111 by the fluorine gas G is terminated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.