Method for the repair of defects in lithographic masks
US6159641A · kind A · utility
10Cited by
16References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 1993 |
| Grant date | Dec 12, 2000 |
| Priority date | — |
| Expiry date | Dec 16, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/26
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to a method for the repair of defects in the nonprinting region of a phase-shifting optical lithography mask by depositing an opaque material on the defect from a gaseous precursor by beam-induced deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.