Rework method utilizing thinner for wafers in manufacturing of semiconductor devices
US6159646A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 1998 |
| Grant date | Dec 12, 2000 |
| Priority date | — |
| Expiry date | Sep 4, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/3021
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thinner composition for removing photoresist, a rework method for wafers, and a method of manufacturing semiconductor devices are provided. The thinner composition is applied for removing excess photoresist coated on the edge side or back side of wafer. The thinner may be a mixture of ethyl lactate (EL), ethyl-3-ethoxy propionate (EEP), and .tau.-butyro lactone (GBL), or a mixture of ethyl lactate (EL), and ethyl-3-ethoxy propionate (EEP), or a mixture of ethyl lactate (EL), and ethyl-3-ethoxy propionate (EEP). The rework process is carried out, using the above thinner compositions, on the wafers having excess coated photoresist due to an etching failure. The method of manufacturing semiconductor devices includes a rinsing step for removing the excess coated photoresist on the edge side or back side of wafer by using the above thinner compositions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.