Method of forming a gate quality oxide-compound semiconductor structure
US6159834A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 1998 |
| Grant date | Dec 12, 2000 |
| Priority date | — |
| Expiry date | Feb 12, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02192
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gate quality oxide-compound semiconductor structure (10) is formed by the steps of providing a III-V compound semiconductor wafer structure (13) with an atomically ordered and chemically clean semiconductor surface in an ultra high vacuum (UHV) system (20), directing a molecular beam (26) of gallium oxide onto the surface of the wafer structure to initiate the oxide deposition, and providing a second beam (28) of atomic oxygen to form a Ga.sub.2 O.sub.3 layer (14) with low defect density on the surface of the wafer structure. The second beam of atomic oxygen is supplied upon completion of the first 1-2 monolayers of Ga.sub.2 O.sub.3. The molecular beam of gallium oxide is provided by thermal evaporation from a crystalline Ga.sub.2 O.sub.3 or gallate source, and the atomic beam of oxygen is provided by either RF or microwave plasma discharge, thermal dissociation, or a neutral electron stimulated desorption atom source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.