Method of manufacturing semiconductor device
US6159861A · kind A · utility
16Cited by
16References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 27, 1998 |
| Grant date | Dec 12, 2000 |
| Priority date | — |
| Expiry date | Aug 27, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of manufacturing a semiconductor device which has a semiconductor substrate, a channel layer formed on the semiconductor substrate and an insulating film deposited on the channel layer, an opening corresponding to a gate electrode pattern is formed in the insulating film by the use of a photoresist film. The channel layer contains crystal components while the photo-resist film contains carbon. The insulating film is etched to exposed said channel layer after removing the photoresist film. In consequence, no reacted production is formed between the crystal components and the carbon on the exposed channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.