Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
US6159871A · kind A · utility
244Cited by
13References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 1998 |
| Grant date | Dec 12, 2000 |
| Priority date | — |
| Expiry date | May 29, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises reacting an methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. The resulting films are useful in the formation of semiconductor devices and have a dielectric constant of 3.6 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.