Reduced surface field device having an extended field plate and method for forming the same

US6160290A · kind A · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Sameer Pendharkar · Allen, US
• Taylor R. Efland · Richardson, US

Key dates

• Filing date: Nov 20, 1998
• Grant date: Dec 12, 2000
• Expiry date: Nov 20, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

A semiconductor device (10) comprises a reduced surface field (RESURF) implant (14). A field oxide layer (20), having a length, is formed over the RESURF implant (14). A field plate (12) extends from a near-side of the field oxide layer (20) and over at least one-half of the length of the field oxide layer (20).