Patent · US Expired

Semiconductor laser device and method of manufacture

US6160830A · kind A · utility

13Cited by
5References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 4, 1998
Grant dateDec 12, 2000
Priority date
Expiry dateMar 4, 2018

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S5/18369
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A Vertical Cavity Surface Emitting Laser (VCSEL) (10) and a method for manufacturing the VCSEL (10). The VCSEL (10) includes a ridge structure (34), a first confinement layer (36) disposed adjacent to a portion of the ridge structure (34), and a second confinement layer (37) disposed on the first confinement layer (36) and disposed adjacent to a portion of the ridge structure (32). Carriers injected into the ridge structure (34) are confined by the first confinement layer (36).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.