Plasma processing apparatus
US6162323A · kind A · utility
Assignees
Inventor
Key dates
| Filing date | Jun 8, 1998 |
| Grant date | Dec 19, 2000 |
| Priority date | — |
| Expiry date | Jun 8, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The processing chamber of an etching apparatus is divided into a plasma generating space and a processing space by a grid electrode. A first feed gas is supplied from a gas source unit to the plasma generating space through a first flow control valve mechanism and a first gas supply line. A second feed gas is supplied from the gas source unit to the processing space through a second flow control valve mechanism and a second gas supply line. The interior of the processing chamber is evacuated by an exhaust pump through an exhaust line connected to the processing space. Each of the first and second flow control valve mechanisms has a plurality of valves whose opening degrees are separately controlled by a CPU.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.