High purity siliconized silicon carbide having high thermal shock resistance
US6162543A · kind A · utility
26Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 11, 1998 |
| Grant date | Dec 19, 2000 |
| Priority date | — |
| Expiry date | Dec 11, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
This invention relates to a siliconized silicon carbide-base composite comprising at least about 71 vol % converted-graphite SiC matrix having open porosity, wherein the open porosity of the matrix is essentially filled with silicon, and the composite has a total metallic impurity content of no more than 10 ppm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.