In-situ boron doped polysilicon with dual layer and dual grain structure for use in integrated circuits manufacturing
US6162711A · kind A · utility
75Cited by
2References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 15, 1999 |
| Grant date | Dec 19, 2000 |
| Priority date | — |
| Expiry date | Jan 15, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and structure providing a dual layer silicon gate film having a uniform boron distribution therein and an ordered, uniform grain structure. Rapid thermal annealing is used to cause the diffusion of boron from an originally doped film to an originally undoped film, resulting in a uniform boron distribution within the structure, thereby rendering the structure resistant to vertical and lateral diffusion of the boron during subsequent processing at elevated temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.