Semiconductor device

US6163043A · kind A · utility

Assignee

• Matsushita Electronics Corporation · JP

Inventors

• Hiroshige Hirano · Nara, JP
• Masato Takeo · Yokkaichi, JP

Key dates

• Filing date: Apr 6, 1998
• Grant date: Dec 19, 2000
• Expiry date: Apr 6, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/30

Abstract

In a semiconductor device with ferroelectric capacitors, variations in the characteristics of the ferroelectric capacitors are reduced, and changes in the characteristic of the ferroelectric capacitor, i.e., characteristic deterioration with passage of time, is suppressed. Lower electrodes 111a that extend along a first direction D1 and have a plan configuration having a second direction D2 perpendicular to the first direction as its width direction, a plurality of upper electrodes 112a that are disposed on the lower electrodes 111a opposite to the lower electrodes, and ferroelectric layers that are disposed between the electrodes constitute ferroelectric capacitors 110a, and a plan configuration of the upper electrode 112a is made a shape of the size in the first direction D1 being smaller than the size in the second direction D2.