MRAM device using magnetic field bias to improve reproducibility of memory cell switching
US6163477A · kind A · utility
58Cited by
4References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 6, 1999 |
| Grant date | Dec 19, 2000 |
| Priority date | — |
| Expiry date | Aug 6, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic field bias is applied to memory cells of an MRAM device during a write operation. The magnetic field bias, which may be applied by a permanent magnet or an electromagnet, can improve reproducibility of memory cell switching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.