Lung Tran
92Patents
31h-index
30Co-inventors
88Inventor score
Filing activity: Jun 21, 1988 → Jun 9, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6483734B1 | Memory device having memory cells capable of four states | Physics | 139 | Expired |
| US6188615A | MRAM device including digital sense amplifiers | Physics | 123 | Expired |
| US6259644A | Equipotential sense methods for resistive cross point memory cell arrays | Electricity | 113 | Expired |
| US6185143A | Magnetic random access memory (MRAM) device including differential sense amplifiers | Physics | 111 | Expired |
| US6750491B2 | Magnetic memory device having soft reference layer | Physics | 109 | Expired |
| US6317376A | Reference signal generation for magnetic random access memory devices | Physics | 103 | Expired |
| US6778421B2 | Memory device array having a pair of magnetic bits sharing a common conductor line | Electricity | 97 | Expired |
| US6363000B1 | Write circuit for large MRAM arrays | Physics | 93 | Expired |
| US6504742B1 | 3-D memory device for large storage capacity | Electricity | 91 | Expired |
| US6584029B2 | One-time programmable memory using fuse/anti-fuse and vertically oriented fuse unit memory cells | Electricity | 75 | Expired |
| US6356477B1 | Cross point memory array including shared devices for blocking sneak path currents | Physics | 75 | Expired |
| US6873544B2 | Triple sample sensing for magnetic random access memory (MRAM) with series diodes | Physics | 62 | Expired |
| US6456524B1 | Hybrid resistive cross point memory cell arrays and methods of making the same | Physics | 62 | Expired |
| US6385111B2 | Reference signal generation for magnetic random access memory devices | Physics | 61 | Expired |
| US6169686A | Solid-state memory with magnetic storage cells | Electricity | 59 | Expired |
| US6256224A | Write circuit for large MRAM arrays | Physics | 58 | Expired |
| US6163477A | MRAM device using magnetic field bias to improve reproducibility of memory cell switching | Physics | 58 | Expired |
| US6781906B2 | Memory cell sensing integrator | Physics | 57 | Expired |
| US6262625A | Operational amplifier with digital offset calibration | Electricity | 56 | Expired |
| US6597598B1 | Resistive cross point memory arrays having a charge injection differential sense amplifier | Physics | 55 | Expired |
| US6757188B2 | Triple sample sensing for magnetic random access memory (MRAM) with series diodes | Physics | 50 | Expired |
| US6567301B2 | One-time programmable unit memory cell based on vertically oriented fuse and diode and one-time programmable memory using the same | Physics | 47 | Expired |
| US6473337B1 | Memory device having memory cells with magnetic tunnel junction and tunnel junction in series | Physics | 45 | Expired |
| US7180770B2 | Series diode thermally assisted MRAM | Physics | 45 | Expired |
| US5930087A | Robust recording head for near-contact operation | Physics | 44 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.