CVD apparatus with high throughput and cleaning method therefor
US6164295A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1997 |
| Grant date | Dec 26, 2000 |
| Priority date | — |
| Expiry date | Apr 29, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02049
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a CVD apparatus and a cleaning method which can precisely perform cleaning at a high speed, in order to increase the throughput of a CVD apparatus. A film formation gas (e.g., SiH.sub.4 and O.sub.2 gases) is introduced from a source gas supply pipe into a chamber to form a silicon oxide film (SiO.sub.2) on a wafer placed on a susceptor by using a plasma or the like. A thin film (SiO.sub.2) mainly consisting of silicon and oxygen, an imperfect oxide film of silicon, or the like also attaches to a wall surface and the respective surfaces of a window plate, a vacuum seal portion, the susceptor, an electrode, an insulator, an exhaust pipe, and the like in the chamber. An HF-based gas supply system for a cleaning etching gas is arranged to clean the interior of the chamber of the CVD apparatus. Particularly, a film formed with a source gas of Si.sub.x H.sub.2x+2 (x=1, 2, 3) and O.sub.2 is more perfect than an imperfect oxide film (e.g., TEOS) formed with an organic silicon source gas, so that bonding is strong, and the etching rate decreases in plasma cleaning and the like. Cleaning with the HF gas according to this invention is very effective.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.