Plasma processing apparatus and method
US6165274A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 1998 |
| Grant date | Dec 26, 2000 |
| Priority date | — |
| Expiry date | Nov 2, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32724
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus for plasma-processing a substrate arranged in a reaction chamber using a high frequency power supplied by a high frequency power introduction means, wherein said high frequency power introduction means comprises a cathode electrode and a conductor portion capable of transmitting a high frequency power to said cathode electrode, said conductor portion being penetrated a wall of said reaction chamber while said conductor portion being electrically isolated from said wall of said reaction chamber by means of an insulating material, at least a part of said insulating material comprising a porous ceramic material, wherein a fluid is introduced through said porous ceramic material to control the temperature of said cathode electrode and/or that of said conductor portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.