Process of forming a semiconductor device
US6165567A · kind A · utility
18Cited by
22References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 1999 |
| Grant date | Dec 26, 2000 |
| Priority date | — |
| Expiry date | Apr 12, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/358
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film is formed over a substrate using a physical vapor deposition method. When using ionized metal plasma physical vapor deposition, the deposition chamber configuration or operating parameters are adjusted to achieve the desired film characteristics. If the film is to be substantially uniform in thickness across a substrate, the deposition species density is made higher at locations away from the center of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.