Method for preventing the formation of recesses in borophosphosilicate glass
US6165694A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 13, 1998 |
| Grant date | Dec 26, 2000 |
| Priority date | — |
| Expiry date | Feb 13, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76829
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for preventing the formation of recesses in the surface of a borophosphosilicate glass layer comprising the step of first forming a borophosphosilicate glass layer over a substrate, then forming a silicon nitride film having a thickness of about 300.ANG. to 1000.ANG. over the borophosphosilicate glass layer. Next, contact windows are formed, followed by cleaning with an RCA solution. The silicon nitride film provides a protective function preventing the formation of recesses on the borophosphosilicate glass surface. Consequently, no short-circuiting metal bridges caused by metal in the recesses after the deposition of metallic conducting wires are formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.