Gallium nitride compound semiconductor light emitting device and process for producing gallium nitride compound semiconductor
US6165812A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 1997 |
| Grant date | Dec 26, 2000 |
| Priority date | — |
| Expiry date | Sep 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The method for producing gallium nitride group compound semiconductor includes the steps of: forming a polycrystalline nitride layer 11a in a first temperature range on a substrate 10; forming a nucleus layer 11b of gallium nitride single crystals in a second temperature range on the polycrystalline nitride layer 11a; growing the nucleus layer 11b of gallium nitride single crystals in a third temperature range such that resulting crystals of the nucleus layer 11b of gallium nitride single crystals come into contact with each other in a direction parallel to a surface of the substrate 10; and growing the nucleus layer 11b of gallium nitride single crystals in a fourth temperature range in a direction vertical to the surface of the substrate 10.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.