Silicon carbide semiconductor device and method of manufacturing the same
US6165822A · kind A · utility
79Cited by
14References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 4, 1999 |
| Grant date | Dec 26, 2000 |
| Priority date | — |
| Expiry date | Jan 4, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vertical type power MOSFET made of silicon carbide includes a surface channel layer doped with nitrogen as dopant with a concentration equal to or less than 1.times.10.sup.15 cm.sup.-3. Accordingly, when a gate oxide film is formed on the surface channel layer, an amount of silicon nitride produced in the gate oxide film and at the interface between the gate oxide film and the surface channel layer becomes extremely small. As a result, carrier traps are prevented from being produced by silicon nitride, resulting in stable FET characteristics and high reliability to the gate oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.