Inventor · Mizuho, JP

Eiichi Okuno

50Patents
14h-index
60Co-inventors
87Inventor score

Filing activity: Jul 20, 1983 → Sep 26, 2019

Most-cited inventions

PatentTitleAreaCited byStatus
US6573534B1 Silicon carbide semiconductor device Emerging Cross-Sectional Technologies 150 Expired
US6455892B1 Silicon carbide semiconductor device and method for manufacturing the same Electricity 129 Expired
US6165822A Silicon carbide semiconductor device and method of manufacturing the same Electricity 79 Expired
US6221700A Method of manufacturing silicon carbide semiconductor device with high activation rate of impurities Electricity 72 Expired
US7365363B2 Silicon carbide semiconductor device and method for manufacturing the same Electricity 37 Expired
US6482704B1 Method of manufacturing silicon carbide semiconductor device having oxide film formed thereon with low on-resistances Electricity 36 Expired
US4562237A One component room temperature curable sealant composition Chemistry; Metallurgy 30 Expired
US7825449B2 Silicon carbide semiconductor device and related manufacturing method Electricity 28 Active
US6452228B1 Silicon carbide semiconductor device Electricity 26 Expired
US6103423A Negative electrode for secondary cells and a non-aqueous electrolyte secondary cell comprising the same as at least one electrode Emerging Cross-Sectional Technologies 23 Expired
US8193564B2 Silicon carbide semiconductor device including deep layer Electricity 22 Active
US7994513B2 Silicon carbide semiconductor device including deep layer Electricity 16 Active
US7824995B2 SiC semiconductor device and method for manufacturing the same Electricity 15 Active
US7893467B2 Silicon carbide semiconductor device having junction barrier Schottky diode Electricity 14 Active
US7645658B2 Method of manufacturing silicon carbide semiconductor device Electricity 11 Active
US7808003B2 Silicon carbide semiconductor device Electricity 9 Active
US7863682B2 SIC semiconductor having junction barrier Schottky diode Electricity 9 Active
US7825017B2 Method of making silicon carbide semiconductor device having multi-layered passivation film with uneven surfaces Electricity 7 Active
US6841436B2 Method of fabricating SiC semiconductor device Electricity 6 Expired
US7855412B2 Silicon carbide semiconductor device and method of manufacturing the same Electricity 6 Active
US7851882B2 Silicon carbide semiconductor device having junction barrier schottky diode Electricity 6 Active
US7745276B2 Method for manufacturing SiC semiconductor device Electricity 5 Active
US7816733B2 SiC semiconductor having junction barrier schottky device Electricity 5 Active
US7915705B2 SiC semiconductor device having outer periphery structure Electricity 5 Active
US7838888B2 Silcon carbide semiconductor device having schottky barrier diode and method for manufacturing the same Electricity 4 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.