Method for producing a silicon capacitor

US6165835A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Hermann Wendt · Grasbrunn, DE
• Hans Reisinger · Grünwald, DE
• Andreas Spitzer · Ottobrunn, DE
• Reinhard Stengl · Stadtbergen, DE
• Ulrike Gruning · Hopewell Junction, US
• Josef Willer · Riemerling, DE
• Wolfgang Hönlein · Unterhaching, DE
• Volker Lehmann · Hersbruck, DE

Key dates

• Filing date: Jul 20, 1999
• Grant date: Dec 26, 2000
• Expiry date: Jul 20, 2019

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/96

Abstract

In producing a silicon capacitor, hole structures (2) are created in a silicon substrate (1), at the surface of which structures a conductive zone (3) is created by doping and whose surface is provided with a dielectric layer (4) and a conductive layer (5), without filling the hole structures (2). To compensate mechanical strains upon the silicon substrate (1) which are effected by the doping of the conductive zone (3), a conformal auxiliary layer (6) is formed on the surface of the conductive layer (5), which auxiliary layer is under a compressive mechanical stress.