Tapered electrode for stacked capacitors

US6165864A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Hua Shen · Beacon, US
• Joachim Nuetzel · Fishkill, US
• Carl Radens · Lagrangeville, US
• David E. Kotecki · Hopewell Junction, US

Key dates

• Filing date: Jul 28, 1998
• Grant date: Dec 26, 2000
• Expiry date: Jul 28, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/711

Abstract

A method for forming a stacked capacitor includes the steps of providing a first insulating layer having a conductive access path therethrough, forming a second insulating layer on the first insulating layer, forming a trench in the second insulating layer, the trench having tapered sidewalls, forming a first electrode in the trench and on the trench sidewalls, the first electrode being electrically coupled to the conductive access path, forming a dielectric layer on the first electrode and forming a second electrode on the dielectric layer. A stacked capacitor having increased surface area includes a first electrode formed in a trench provided in a dielectric material. The first electrode has tapered surfaces forming a conically shaped portion of the first electrode, the first electrode for accessing a capacitively coupled storage node.