Method for manufacturing semiconductor device
US6165900A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 1999 |
| Grant date | Dec 26, 2000 |
| Priority date | — |
| Expiry date | Jan 20, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B10/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device manufacturing method is provided. In this method for interconnecting conductive layers, an insulating layer is formed over the surface of a semiconductor substrate having conductive layers formed thereon. The insulating layer is removed from over the conductive layers and a silicon layer is coated on the overall surface of the resultant structure. The insulating layer and some silicon are then removed from an area except for the area from a first conductive layer through a second conductive layer, and a refractory metal layer is formed on the overall surface of the resultant structure. This refractory metal is used for silicidation. A metal silicide layer is then formed from the first conductive layer through the second conductive layer by thermally treating the refractory metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.