Inverted light emitting diode

US6169294A · kind A · utility

Assignee

• Epistar Corporation · TW

Inventors

• Lee Biing-Jye · Baoshan, TW
• Jou Ming-Jiunn · Baoshan, TW
• Jacob C. Tarn · San Jose, US
• Chuan-Ming Chang · Hsinchu, TW
• Liu Chia-Cheng · Baoshan, TW

Key dates

• Filing date: Sep 8, 1998
• Grant date: Jan 2, 2001
• Expiry date: Sep 8, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/856

Abstract

A nitride light emitting diode is fabricated on a transparent sapphire substrate. The LED is then mounted upside-down on a conductive silicon substrate with a bottom electrode to serve as the output terminal for the cathode of the LED. The LED die is partially etched to expose the anode of the LED, where a top electrode is formed. In comparison with conventional LED structure with both electrodes located on top of the die, moving one electrode to the bottom allows more light to be transmitted upward and reflects the light incident downward. For equal amount of light emission, the new structure occupies less area.