Light-emitting diode device
US6169296A · kind A · utility
37Cited by
7References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 22, 1998 |
| Grant date | Jan 2, 2001 |
| Priority date | — |
| Expiry date | Oct 22, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
Abstract
The light-emitting diode device of the present invention includes an active layer, a p-type contact layer, a Schottky electrode and an ohmic electrode. The active layer is formed over an n-type semiconductor substrate. The contact layer is formed over the active layer. The Schottky electrode is selectively formed on the contact layer and makes Schottky contact with the contact layer. The ohmic electrode is formed to surround the Schottky electrode on the contact layer and to be electrically connected to the Schottky electrode and transmits the light emitted from the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.