Static semiconductor memory device

US6169313A · kind A · utility

Assignee

• Mitsubishi Electric Corporation · JP

Inventors

• Kazuhito Tsutsumi · Kasai, JP
• Motoi Ashida · Kasai, JP
• Yoshiyuki Haraguti · Kasai, JP
• Hideaki Nagaoka · Kasai, JP
• Eiji Hamasuna · Kasai, JP
• Yoshikazu Kamitani · Kasai, JP

Key dates

• Filing date: Jun 10, 1999
• Grant date: Jan 2, 2001
• Expiry date: Jun 10, 2019

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S257/904

Abstract

A shared contact is provided on the side of a drain active region of each of two load transistors. Thus, a stabilized low voltage operation is ensured in a full CMOS type SRAM memory cell having the shared contact.