Solid-state memory with magnetic storage cells
US6169686A · kind A · utility
59Cited by
11References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 20, 1997 |
| Grant date | Jan 2, 2001 |
| Priority date | — |
| Expiry date | Nov 20, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.