Method for manufacturing compound semiconductor epitaxial wafer
US6171394A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 1998 |
| Grant date | Jan 9, 2001 |
| Priority date | — |
| Expiry date | May 20, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02543
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing compound semiconductor epitaxial wafer allowing sharp changes in alloy composition and growth of high-quality epitaxial layers. In a process for epitaxially growing a gallium arsenide phosphide GaAs.sub.1-x P.sub.x alloy composition gradient layer 4 on a compound semiconductor single-crystalline substrate made of gallium phosphide GaP or gallium arsenide GaAs, one group V gas as a source for the group V element not composing the single-crystalline substrate is varied in its supply volume in at least one cycle of sharp increase/moderate decrease, while the other group V gas as a source for the group V element composing the single-crystalline substrate is moderately decreased, thereby achieving at least one cycle of sharp increase/moderate decrease of a product of partial pressures of the group III and group V gases so that at least one set of an increasing zone and a decreasing zone of the alloy composition is formed within the gallium arsenide phosphide GaAs.sub.1-x P.sub.x alloy composition gradient layer 4.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.