Vacuum processing apparatus, and a film deposition apparatus and a film deposition method both using the vacuum processing apparatus
US6171641A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 1994 |
| Grant date | Jan 9, 2001 |
| Priority date | — |
| Expiry date | Jun 15, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6838
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A vacuum processing apparatus for performing various processes on a wafer in a vacuum chamber, and a film deposition method and a film deposition apparatus using this vacuum processing apparatus. The vacuum processing apparatus, the film deposition method and the film deposition apparatus using the vacuum processing apparatus according to this invention are characterized in that temperature control of the wafer is performed in a film deposition process, and particularly characterized in that after the emissivity calibration using a combination of a temperature calibration stage and a shutter is performed, the substrate is transferred to stages in a vacuum film deposition process chamber, and a film is deposited on the substrate by controlling the substrate temperature to a specified temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.