Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K-DRAMS using a disposable-oxide processing

US6171898A · kind A · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Darius Crenshaw · Allen, US
• Scott R. Summerfelt · Dallas, US

Key dates

• Filing date: Dec 15, 1998
• Grant date: Jan 9, 2001
• Expiry date: Dec 15, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/682

Abstract

A capacitor structure and method. The capacitor (12) comprises a HDC dielectric (40) and upper (44) and lower electrodes. The lower electrode comprises polysilicon(31-32), a diffusion barrier (34) on the polysilicon and an oxygen stable material (36) on the diffusion barrier (34). The oxygen stable material (36) is formed by first forming a disposable dielectric layer (50) patterned and etched to expose the area where the storage node is desired and then depositing the oxygen stable material (36). The oxygen stable material (36) is then either etched back or CMP processed using the disposable dielectric layer (50) as an endpoint. The disposable dielectric layer (50) is then removed. The HDC dielectric (40) is then formed adjacent the oxygen stable material (36).