Darius Crenshaw
20Patents
11h-index
31Co-inventors
71Inventor score
Filing activity: Mar 9, 1995 → Jan 18, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6657832B2 | Mechanically assisted restoring force support for micromachined membranes | Electricity | 202 | Expired |
| US6376787B1 | Microelectromechanical switch with fixed metal electrode/dielectric interface with a protective cap layer | Emerging Cross-Sectional Technologies | 175 | Expired |
| US6698082B2 | Micro-electromechanical switch fabricated by simultaneous formation of a resistor and bottom electrode | Emerging Cross-Sectional Technologies | 48 | Expired |
| US5770499A | Planarized capacitor array structure for high density memory applications | Electricity | 34 | Expired |
| US5726085A | Method of fabricating a dynamic random access memory (DRAM) cell capacitor using hemispherical grain (HSG) polysilicon and selective polysilicon etchback | Electricity | 31 | Expired |
| US6184074A | Method of fabrication a self-aligned polysilicon/diffusion barrier/oxygen stable sidewall bottom electrode structure for high-K DRAMS | Electricity | 23 | Expired |
| US6699745B1 | Capacitor and memory structure and method | Emerging Cross-Sectional Technologies | 23 | Expired |
| US6197653A | Capacitor and memory structure and method | Electricity | 19 | Expired |
| US5998225A | Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K DRAMs using disposable-oxide processing | Electricity | 19 | Expired |
| US6171898A | Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K-DRAMS using a disposable-oxide processing | Electricity | 13 | Expired |
| US7189615B2 | Single mask MIM capacitor and resistor with in trench copper drift barrier | Electricity | 13 | Expired |
| US7250334B2 | Metal insulator metal (MIM) capacitor fabrication with sidewall spacers and aluminum cap (ALCAP) top electrode | Electricity | 10 | Expired |
| US6180446A | Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K DRAMS using disposable-oxide processing | Electricity | 6 | Expired |
| US7115467B2 | Metal insulator metal (MIM) capacitor fabrication with sidewall barrier removal aspect | Electricity | 4 | Expired |
| US6525396B2 | Selection of materials and dimensions for a micro-electromechanical switch for use in the RF regime | Electricity | 4 | Expired |
| US6764872B2 | Microelectromechanical switch | Emerging Cross-Sectional Technologies | 2 | Expired |
| US6642593B2 | Microelectromechanical switch | Emerging Cross-Sectional Technologies | 2 | Expired |
| US6638818B1 | Method of fabricating a dynamic random access memory with increased capacitance | Emerging Cross-Sectional Technologies | 1 | Expired |
| US6496352B2 | Post-in-crown capacitor and method of manufacture | Electricity | 1 | Expired |
| US6977196B1 | Micro-electromechanical switch fabricated by simultaneous formation of a resistor and bottom electrode | Emerging Cross-Sectional Technologies | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.