Method for forming high-density integrated circuit capacitors
US6171970A · kind A · utility
42Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 1999 |
| Grant date | Jan 9, 2001 |
| Priority date | — |
| Expiry date | Jan 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching a platinum surface 200. The method includes the step of forming a hardmask 202 including titanium, aluminum, and nitrogen on the platinum surface. The hardmask covers portions of the platinum surface. The method further includes removing platinum from uncovered portions of the surface with a plasma including a nitrogen-bearing species. The etch chemistry may also comprise an oxygen-bearing species.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.