Method of chemical-mechanical polishing
US6171976A · kind A · utility
39Cited by
8References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 2, 1999 |
| Grant date | Jan 9, 2001 |
| Priority date | — |
| Expiry date | Mar 2, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of chemical-mechanical polishing. A die region and a scribe line region are defined on a wafer. A dummy pattern is formed in the scribe line region. A dielectric layer is formed to cover the dummy pattern and the wafer. The dielectric layer is planarized by chemical-mechanical polishing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.