Patent · US Expired

Method of estimating lifetime of floating SOI-MOSFET

US6173235A · kind A · utility

71Cited by
3References
2Claims
0Family size

Assignee

Inventor

Key dates

Filing dateSep 6, 1996
Grant dateJan 9, 2001
Priority date—
Expiry dateSep 6, 2016

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R31/2621
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

In a method of estimating the lifetime of a floating SOI-MOSFET, constants A and B, stress condition dependency Id.sub.t (S) of a drain current and stress condition dependency Isub(S) of a substrate current in a body-fixed SOI-MOSFET, and stress condition dependency Id.sup.f (S) of a drain current in the floating SOI-MOSFET are obtained from experiment to estimate lifetime .upsilon..sub.f (S) from the following equation: ##EQU1## where W.sup.f represents a known channel width of the floating SOI-MOSFET.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.