Substrate treating method and apparatus
US6174371A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 1998 |
| Grant date | Jan 16, 2001 |
| Priority date | — |
| Expiry date | Sep 16, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate treating method and apparatus are disclosed which are capable of heating a substrate in a stable atmosphere including the vapor of a treating liquid, without permitting the vapor of the treating liquid to condense on the substrate. The vapor of the treating liquid is mixed with a diluting gas to form a treating vapor mixture. At this time, the flow rate of the diluting gas is adjusted so that the partial pressure ratio of the vapor of the treating liquid in the treating vapor mixture increases with the passage of time. This treating vapor mixture is transmitted to a treating chamber. The treating chamber includes a substrate support table heated to a predetermined temperature. When the substrate is lowered from a separate position away from the support table to a position resting on the support table, downward displacements of the substrate are controlled so that the vapor of the treating liquid in the treating vapor mixture present adjacent the substrate surface under treatment is maintained substantially at a saturation pressure. In another method disclosed, the partial pressure ratio of the vapor of the treating liquid in the treating vapor mixture is adjusted accord…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.