Magnetically patterned etch mask
US6174449A · kind A · utility
17Cited by
63References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 14, 1998 |
| Grant date | Jan 16, 2001 |
| Priority date | — |
| Expiry date | May 14, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for forming an etch mask is described. In particular, an etch mask is formed using masking particles positionally restrained by a matrix medium. Either the masking particles or the matrix medium is more magnetically conductive with respect to the other. A magnetic field is applied for making a random distribution of the masking particles less random. Consequently, agglomeration of the masking particles is reduced. Masking particles with submicron dimensions may be used for providing features of less than a micron. The mask formed may be an etch mask employed in forming a field emitter tip for a field emission display.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.