Layer crystal structure oxide, production method thereof and memory element using the same
US6174463A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1998 |
| Grant date | Jan 16, 2001 |
| Priority date | — |
| Expiry date | Mar 26, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/225
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A layer crystal structure oxide, and memory element comprising same, comprising bismuth (Bi), a first element, a second element and oxygen (O), wherein the first element is at least one selected from the group consisting of sodium (Na), potassium (K), calcium (Ca), barium (Ba), strontium (Sr), lead (Pb), and bismuth (Bi), the second element is at least one selected from the group consisting of iron (Fe), titanium (Ti), niobium (Nb), tantalum (Ta), and tungsten (W), and the composition ratio of the bismuth with respect to the second element is larger than the stoichiometric composition ratio, wherein, the composition ratio of the bismuth with respect to the first element is in the range of (2.+-.0.17)/(m-1) including the stoichiometric composition ratio 2/(m-1), where m is an integer from, and including, 2 to 5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.