Method of fabricating ferromagnetic tunnel junction device
US6174736A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 1998 |
| Grant date | Jan 16, 2001 |
| Priority date | — |
| Expiry date | Dec 11, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12931
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
There is provided a method of fabricating a ferromagnetic tunnel junction device, including the steps of (a) forming a first ferromagnetic layer on a substrate, (b) forming a tunnel barrier layer on the first ferromagnetic layer, (c) forming a second ferromagnetic layer on the tunnel barrier layer, (d) mechanically polishing end surfaces of the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer, and (e) etching the surfaces of the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer. The method provides a ferromagnetic tunnel junction device having a height defined with high accuracy, and including a tunnel barrier layer keeping first and second ferromagnetic layers in electrical isolation with each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.