Patent · US Expired

Method for quantifying proximity effect by measuring device performance

US6174741A · kind A · utility

17Cited by

4References

13Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Wilfried Hansch · South Burlington, US
Frank Prein · Glen Allen, US
Jurgen Faul · Radebeul, DE

Key dates

Filing date	Dec 19, 1997
Grant date	Jan 16, 2001
Priority date	—
Expiry date	Dec 19, 2017

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Improved techniques for quantifying proximity effects during fabrication of integrated circuits are disclosed. The improved techniques use active features formed on a semiconductor wafer to quantify proximity effects. According to the improved techniques, a device performance quantity for an active feature is measured, and then a feature length for the active feature is determined in accordance with the measured device performance quantity. The fabrication processing can then be evaluated and/or compensated based on the determined feature length. In one example, the active feature can be a metal-oxide semiconductor (MOS) transistor and the device performance quantity can be current.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.