Wilfried Hansch
5Patents
3h-index
7Co-inventors
42Inventor score
Filing activity: Nov 12, 1991 → Dec 19, 1997
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5268317A | Method of forming shallow junctions in field effect transistors | Electricity | 27 | Expired |
| US6174741A | Method for quantifying proximity effect by measuring device performance | Electricity | 17 | Expired |
| US5602410A | Off-state gate-oxide field reduction in CMOS | Electricity | 7 | Expired |
| US5908310A | Method to form a buried implanted plate for DRAM trench storage capacitors | Electricity | 3 | Expired |
| US6180972A | Buried, implanted plate for DRAM trench storage capacitors | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.