Method of producing micro contact structure and contact probe using same
US6174744A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2000 |
| Grant date | Jan 16, 2001 |
| Priority date | — |
| Expiry date | Mar 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of producing a contact structure and a probe card makes it possible to test a semiconductor integrated circuit device formed on a semiconductor wafer having a pin pitch of 0.5 mm or smaller. The contact structure includes a micro contact pin having electric conductivity formed on one end of a beam which is movable in a vertical direction, and a piezoelectric element formed on the beam to drive the beam in the vertical direction. The beam is made of silicon on the surface of which is formed of a conductive thin film, and the micro contact pin has a pyramid shape. The piezoelectric element is a bimorph plate mounted on an upper surface of the beam or both upper and lower surfaces of the beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.