Dielectric films from organohydridosiloxane resins with low organic content
US6177199A · kind A · utility
18Cited by
68References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 7, 1999 |
| Grant date | Jan 23, 2001 |
| Priority date | — |
| Expiry date | Jan 7, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a dielectric film on a substrate from a composition containing an organohydridosiloxane resin is presented. The organohydridosiloxane resins have a cage conformation and up to 40 mole percent of an organic substituent. The process of making a dielectric film includes forming a solution of a solvent and the organohydridosiloxane resin, dispensing the solution on a substrate, spinning the substrate, baking the substrate to remove the solvent, and curing the substrate to form the dielectric film. The dielectric films of the present invention exhibit dielectric constants of approximately 3 or lower.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.