Patent · US Expired

Ion extraction process for single side wafers

US6177279A · kind A · utility

1Cited by
11References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 12, 1998
Grant dateJan 23, 2001
Priority date—
Expiry dateNov 12, 2018

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T436/25125
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A process for extracting inorganic ionic contaminants from a front surface of a silicon wafer for chemical analysis. The wafer is placed in a container upon a support which holds the wafer in a generally level orientation and isolates the wafer to inhibit air circulation over the front surface. Air circulation can introduce contaminants to the extraction fluid, causing a false measurement of contaminants on the wafer. A layer of extraction fluid is deposited upon only the front surface of the wafer and held for a period of time so that contaminants on the front surface are extracted into the layer of fluid. A portion of the layer of fluid is collected by a sampling device for subsequent analysis.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.