Method of manufacturing a semiconductor device with a field effect transistor
US6177303A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 1999 |
| Grant date | Jan 23, 2001 |
| Priority date | — |
| Expiry date | Aug 24, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/665
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the known replacement gate process, the relatively high-ohmic poly gate is replaced by a low-ohmic metal gate by depositing a thick oxide layer and subsequently planarizing this layer by CMP until the gate is reached, which gate can be selectively removed and replaced by a metal gate. The process is simplified considerably by providing the gate structure as a stack of a dummy poly gate (4) and a nitride layer (5) on top of the poly gate. When, during the CMP, the nitride layer is reached, the CMP is stopped, thereby precluding an attack on the poly. The nitride and the poly are selectively removed relative to the oxide layer (10).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.